| PART |
Description |
Maker |
| MX29LV640DBXEC-90G MX29LV640DBXEI-90G MX29LV640DTX |
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V
|
Macronix International
|
| MX29LV640DB |
64m-bit Single Voltage 3V ONLY Uniform Sector Flash Memory
|
Macronix International
|
| MX28F640C3BTC-12 MX28F640C3BTC-90 MX28F640C3BXAC-1 |
64M-BIT [4M X16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX28F640C3BBTC-12 MX28F640C3BBTC-90 MX28F640C3BT M |
64M-BIT [4M X16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX28F640C3BTTC-12 MX28F640C3BBTI-12 MX28F640C3BBTC |
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 120 ns, PDSO48
64M-BIT [4M x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX29LV640MBXBI-90G MX29LV640MTXBI-90 MX29LV640MTXB |
64M-BIT [8M x 8/4M x 16] SINGLE VOLTAGE 3V ONLY FLASH MEMORY 4M X 16 FLASH 3V PROM, 90 ns, PBGA63
|
Macronix International Co., Ltd.
|
| KM23V64000T |
64M-Bit (8Mx8 /4Mx16) CMOS Mask ROM(64M(8Mx8 /4Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MC-4R128CPE6C-653 MC-4R128CPE6C-745 MC-4R128CPE6C- |
64M X 16 DIRECT RAMBUS DRAM MODULE, 1.5 ns, DMA184
Direct Rambus DRAM RIMM Module 128M-BYTE (64M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 128M-BYTE (64M-WORD x 16-BIT)
|
ELPIDA MEMORY INC
|
| SST39VF1602 SST39VF6402 SST39VF3201 SST39VF3202 |
(SST39VFxx0x) 16M-Bit / 32M-Bit / 64M-Bit Multi-Purpose Flash Plus
|
Silicon Storage Technology
|
| HM5164165F HM5164165FJ-6 HM5165165FJ-6 HM5164165FJ |
(HM5164165F / HM5165165F) 64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh 6400 EDO公司的DRAM Mword x 16位）8K的refresh/4k刷新
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| 23C6410 MX23C6410 MX23C6410MC-10 MX23C6410MC-12 MX |
64M-BIT Mask ROM (8/16 Bit Output) For SOP and TSOP Packages
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
